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本文利用低能电子束扫描技术,用慢扫描电路与 x-y 记录仪匹配的方法,分析了表面逸出功分布及其变化。对钡钨阴极的测量表明:它激活前后,寿命过程逸出功分布有明显的变化;氧化物阴极的逸出功分布比钡钨阴极更不均匀。激活良好的阴极,逸出功分布符合 Gauss 分布。本文还观察了 W 与 Si 单晶的低能电子反射现象,测得 Si(100)面自费米能级到导带底的宽度 E_C=1.2eV,电子亲和势 x≈3.6eV。
In this paper, the low-energy electron beam scanning technology, using a slow scan circuit and x-y recorder matching method to analyze the distribution of surface work function and its variation. The measurement of barium tungsten cathode shows that there is a significant change in the work function of work function before and after its activation. The work function of oxide cathode is more uneven than the barium tungsten cathode. Activation of a good cathode, work function distribution consistent with Gauss distribution. We also observed the low-energy electron reflection of W and Si single crystals. We measured the E_C = 1.2eV and the electron affinity x≈3.6eV from the Fermi level of Si (100) to the bottom of the conduction band.