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研究了一种简化预处理辅助化学镀工艺制备Cu包覆Ti C复合粉末。利用场发射扫描电子显微镜和能谱仪分析了原始Ti C粉末,预处理之后的Ti C粉末,Cu包覆Ti C复合粉末的表面形貌和成分,同时也阐述了Cu镀层的生长机理。结果表明,经过简化预处理之后的Ti C出现了很多表面缺陷,Cu能够均匀的包覆在Ti C颗粒表面。其生长机理如下:经过预处理之后的Ti C出现很多表面缺陷,成为化学镀过程中的活性点;化学镀过程中,Cu在Ti C表面的各个缺陷处形核长大;Cu与Cu之间相互接触相互作用形成密集的网状结构最终形成致密的Cu镀层。
A Cu-coated Ti C composite powder was prepared by a simplified pretreatment auxiliary electroless plating process. The surface morphology and composition of the raw TiC powder, the pretreated TiC powder and the Cu-coated TiC composite powder were analyzed by field emission scanning electron microscopy and energy dispersive spectroscopy. The growth mechanism of Cu coating was also described. The results show that there are many surface defects in TiC after the simplified pretreatment, and Cu can be uniformly coated on the surface of TiC particles. The growth mechanism is as follows: TiC after pretreatment has many surface defects and becomes the active point in the electroless plating process. During the electroless plating process, Cu nucleation grows up at each defect on the TiC surface; between Cu and Cu Interaction with each other to form a dense mesh structure eventually formed a dense Cu coating.