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介绍了2～18GHz GaAs 微波低噪声宽带单片放大器设计原理及主要研究工作。给出了主要研究结果:在2～18GHz 频率范围内,管壳封装的两级级联放大器的增益 G_a=13.5～18.3dB,噪声系数 F_n=4.2～6.2dB,输入电压驻波比 VSWR_(in)<2.0,输出电压驻波比 VSWR_(out)<2.5。
The design principle and main research work of 2 ~ 18GHz GaAs microwave low noise wideband monolithic amplifier are introduced. The main research results are presented as follows: In the frequency range of 2 ~ 18GHz, the gain of the cascaded two-stage cascaded amplifier is G_a = 13.5 ~ 18.3dB, the noise figure F_n is 4.2 ~ 6.2dB, VSWR VSWR_ (in ) <2.0, the output voltage VSWR_out (out) <2.5.