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用热壁法在1050～1250℃的温度范围内,利用CH_3SiCl_3作原料,H_2作载气,Ar作稀释气体,在碳纤维上用化学气相沉积法(CVD)涂覆碳化硅涂层。在CH_3SiCl_3温度为19±3℃,H_2/CH_3SiCl_3为5:1,Ar的流量为2.67升/分的条件下得到均匀的碳化硅涂层。涂层的结构为β-SiC。H_2影响反应过程,从而影响产物的组成及结构。在沉积初期,涂层厚度与反应时间成正比。沉积反应的活化能为82kJ/mol。
In the temperature range of 1050 ~ 1250 ℃, using hot wall method, CH_3SiCl_3 as raw material, H_2 as carrier gas and Ar as diluent gas were coated on carbon fibers by chemical vapor deposition (CVD). A uniform SiC coating was obtained at a temperature of 19 ± 3 ℃ for CH_3SiCl_3, a 5: 1 ratio of H_2 / CH_3SiCl_3 and an Ar flow rate of 2.67 L / min. The structure of the coating is β-SiC. H_2 affect the reaction process, thus affecting the composition and structure of the product. In the initial deposition, the coating thickness is proportional to the reaction time. The activation energy of the deposition reaction is 82 kJ / mol.