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采用微波等离子体气相沉积(MPCVD)在商用3 mm×3 mm×1 mm高温高压合成(HPHT)Ib型(100)金刚石衬底上同质外延生长B掺杂金刚石薄膜,并在此材料的基础上利用磁控溅射Ti/Au作欧姆电极、电子束(EB)蒸镀Au肖特基接触电极制备了不同结构参数金刚石肖特基势垒二极管。测试结果表明:所生长的金刚石薄膜表面非常平整,可以看到比较明显的原子台阶;所制备的器件具有明显的整流特性,肖特基电极直径100?m,肖特基电极和欧姆电极间距10?m,外加电压-15 V,300 K时测得器件正向导通电阻20Ω,反向饱和电流小于10-6 A,反向击穿电压大约103.5 V;电极间距越大,反向击穿电压越高,器件正向电流越小。
B-doped diamond films were epitaxially grown by microwave plasma vapor deposition (MPCVD) on a commercially available 3 mm × 3 mm × 1 mm HPHT Ib type (100) diamond substrate and based on this material The diamond Schottky barrier diodes with different structural parameters were prepared by magnetron sputtering Ti / Au as ohmic electrode and electron beam (EB) as Au Schottky contact electrode. The results show that the surface of the grown diamond thin film is very flat and the obvious atomic steps can be seen. The prepared device has obvious rectification characteristics. The Schottky electrode has a diameter of 100 μm, and Schottky electrode and ohmic electrode spacing 10 ? m, the applied voltage -15 V, 300 K measured when the device forward conduction resistance 20Ω, reverse saturation current is less than 10-6 A, the reverse breakdown voltage of about 103.5 V; electrode spacing, the reverse breakdown voltage The higher the device forward current is smaller.