对新型渗硼剂Ｂ（Ｃ２Ｈ５）３的渗硼工艺进行了研究。结果表明：在正常渗硼工艺条件下，基体表面没有形成连续致密的渗硼层，而是形成了一层数μｍ厚的硼碳层；在间歇渗硼工艺条件下，基体表面形成了一层致密的渗硼层，这是因为通过溅射消除了在渗硼过程中沉积在基体表面的硼碳层，使硼原子在渗硼时能无阻碍地向基体内部扩散的缘故 The boronizing process of the new boronizing agent B (C2H5) 3 was studied. The results show that under normal boronizing conditions, there is no continuous boronizing layer formed on the surface of the substrate, but a boron carbon layer with a thickness of several μm is formed. Under the condition of intermittent boronization, the substrate surface forms a layer A dense boronizing layer is formed because the boron-carbon layer deposited on the surface of the substrate during boronization is eliminated by sputtering so that the boron atoms can be diffused into the substrate without obstruction during boronizing