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在室温、10 Pa氦气氛围中,采用脉冲激光沉积(PLD)技术,通过在烧蚀羽辉正上方距靶面不同位置垂直引入一束氦气流,在烧蚀点正下方与烧蚀羽辉轴线平行放置的衬底上沉积了一系列纳米Si晶薄膜。扫描电子显微镜(SEM)、拉曼(Raman)散射光谱和X射线衍射(XRD)谱检测结果均表明,纳米Si晶粒在距靶一定的范围内形成,其尺寸随与靶面距离的增加先增大后减小。在分析衬底上的晶粒尺寸及其位置分布的基础上,结合流体力学模型、成核分区模型、热动力学方程以及晶粒形成后的类平抛运动,计算得出了纳米Si晶粒的成核区宽度为56.2 mm。
Pulsed Laser Deposition (PLD) was used at room temperature in a 10 Pa helium atmosphere to introduce a stream of helium vertically at a different location from the target just above the ablation plume and directly beneath the ablation point A series of nano-Si thin films are deposited on the substrate with parallel axes. Scanning electron microscopy (SEM), Raman scattering (XRD) and X-ray diffraction (XRD) spectra showed that the nano-Si grains were formed within a certain range from the target and the size of the nano-Si was Increase and decrease. Based on the analysis of the crystal grain size and its location distribution on the substrate, combined with the fluid mechanics model, the nucleation zoning model, the thermodynamic equation and the class-like throwing motion after the grain formation, the nano-Si grains The nucleation zone width is 56.2 mm.