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针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insula-tor)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结构器件中,辐射诱生场氧化层固定电荷将使得器件侧壁泄漏电流增加,器件前、背栅关态电流随总剂量变化明显;在环栅结构器件中,辐射诱使背栅晶体管开启将使得前栅器件关态电流变大,而带-带隧穿与背栅泄漏电流的耦合效应将使得器件关态电流随前栅电压减小而迅速增加.基于以上结果,可通过改良版图结构以提高SOI器件的抗总剂量电离辐射能力.
The experimental results show that the increase of the off-state current induced by the radiation depends mainly on the leakage current of the side wall of the SOI (Silicon On Insula-tor) , Back-gate parasitic transistor conduction, band-band tunneling and back gate leakage current coupling effect in the gate structure of the device, the radiation induced field oxide fixed charge will make the device sidewall leakage current increases, the front and back of the device The gate-off current varies significantly with the total dose. In the ring-gate structure, the radiation-induced back-gate transistor will turn on the off-gate current of the front-gate device and the coupling effect between the band-band tunneling and the back gate leakage current So that the device off-state current rapidly decreases with the decrease of the gate voltage.Based on the above results, it is possible to improve the total dose-dependent ionizing radiation resistance of the SOI device by improving the layout structure.