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本文报导了运用 L P- MOCVD制备蓝光 L ED In Ga N有源区的最近进展 ,以及高温生长技术带来的优越性。通过对 Zn掺杂 In Ga N薄膜发光特性的分析 ,发现其光致荧光 (PL )谱中 ,与 Zn掺杂有关的发光峰的强度受该生长温度下 Zn在 In Ga N中的溶解度的限制。利用我们的实验方法 ,使得 In Ga N有源区的发光波长在蓝光区内可任意调节 ,并给出了得到的几个典型的荧光谱。
This paper reports the recent progress in the fabrication of blue light L ED In Ga N active regions by using L P-MOCVD and the superiority brought by high temperature growth. By analyzing the luminescent properties of Zn-doped In Ga N thin films, we found that the intensity of the luminescence peak related to Zn doping in the PL spectra is limited by the solubility of Zn in In Ga N at the growth temperature . Using our experimental method, the emission wavelength of the In Ga N active region can be arbitrarily adjusted in the blue region, and several typical fluorescence spectra obtained are given.