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A kind of efficient non-doped white organic light-emitting diodes(WOLEDs) were realized by using a bright blue-emitting layer of 4,4-bis(2,2-diphenylvinyl)-1,1-biphenyl(DPVBi) combining with red emitting ultrathin layer of [2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene]propane-dinitrile(DCM2) and green emitting ultrathin layer of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one(C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. For comparing, a doped WOLED was also fabricated, in which C545 T and DCM2 are codoped into DPVBi layer to provide blue, green and red emission for obtaining white emission. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd/m~2 at 16 V and 5.23 lm/W at 5 V, respectively, and its Commission Internationale de l’Eclairage(CIE) coordinate changes from(0.393 7, 0.445 3) at 5 V to(0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545 T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545 T has a maximum efficiency of 15.23 cd/A at 8 V and a maximum power efficiency of 6.51 lm/W at 7 V, and its maximum luminance is 10 620 cd/m~2 at 16 V. CIE coordinates of non-doped WLEDs with C545 T thickness of 0.05 nm, 0.10 nm and 0.20 nm are(0.447 3, 0.455 6),(0.464 0, 0.473 1) and(0.458 4, 0.470 0) at 8 V, respectively.
A kind of efficient non-doped white organic light-emitting diodes (WOLEDs) were realized by using a bright blue-emitting layer of 4,4-bis (2,2-diphenylvinyl) red emitting ultrathin layer of [2-methyl-6- [2- (2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ] propane-dinitrile (DCM2) and green emitting ultrathin layer of 10- (2-benzothiazolyl) -2,3,6,7-tetrahydro- 1,1,7,7-tetramethyl-1H, 5H, benzopyropyrano (6,7-8-i, j) quinolizin-11-one (C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd / m ~ 2 at 16 V and 5.23 lm / W at 5 V, respectively, and its Commission Internationale de l’Eclairage (CIE) coordinate changes from (0.393 7, 0.445 3) at 5 V to (0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545 T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545 T has a maximum efficiency of 15.23 cd / A at 8 V and a maximum power efficiency of 6.51 lm / W at 7 V, and its maximum luminance is 10 620 cd / m ~ 2 at 16 V. CIE coordinates of non-doped WLEDs with C545 T thickness of 0.05 nm, 0.10 nm and 0.20 nm are (0.447 3, 0.455 6), (0.464 0, 0.473 1) and (0.458 4, 0.470 0) at 8 V, respectively.