介绍了一种采用GaAs PHEMT管芯设计的超高频内匹配功率器件。为了在更高的频率获得较高的输出功率,采用0.25μm栅长的PHEMT工艺,制作了总栅宽19.2 mm的大功率管芯。采用频带较宽的微带渐变传输线和T型网络共同组成栅极和漏极的匹配电路,并对封装管壳进行优化,有效提高了器件的微波特性。在带内频率14.5～15 GHz、漏源电压Vds为8 V时,器件输出功率大于40.4 dBm(11 W),线性功率增益为7 dB,功率附加效率大于23%。 An ultra-high frequency internal matching power device designed with GaAs PHEMT die is introduced. In order to obtain higher output power at higher frequencies, a 0.25 mm gate length PHEMT process was used to fabricate a high power die with a total gate width of 19.2 mm. The microstrip tapered transmission line with wide frequency band and the T-type network form a matching circuit of the gate and the drain together, and the packaging tube shell is optimized to effectively improve the microwave characteristics of the device. With an in-band frequency of 14.5-15 GHz and a drain-source voltage Vds of 8 V, the device output power is greater than 40.4 dBm (11 W) with a linear power gain of 7 dB and a power added efficiency of more than 23%.