InP/InGaAsP脊波导的单模特性与偏振特性研究

来源 :半导体光电 | 被引量 : 0次 | 上传用户:judehui01
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
以InP/InGaAsP脊形波导结构为研究对象,采用有限元算法(FEM),系统地仿真分析了在固定芯层厚度的情况下,不同脊高和脊宽条件下脊形波导的单模特性和偏振特性。在芯层厚度一定的情况下,脊宽越窄,刻蚀深度越浅,波导的传输模式越接近单模。在深刻蚀情况下,脊波导模双折射系数受到脊宽的影响较大,波导的偏振不敏感性较差;在浅刻蚀情况下,模双折射系数(Δn=nTE-nTM)受到脊宽和脊高的影响较为微弱,稳定在1.2×10-3。相关仿真和分析为基于InP/InGaAsP脊波导的光电子器件的结构设计提供了一定的理论支持。 Taking the InP / InGaAsP ridge waveguide structure as the research object, the finite element method (FEM) is used to systematically simulate and analyze the single-mode characteristics of ridge waveguide with different ridge height and ridge width under the condition of fixed core thickness and Polarization characteristics. In the case of a certain core thickness, the narrower the ridge width, the shallower the etching depth, the closer the transmission mode of the waveguide is to the single mode. In the case of deep etching, the birefringence coefficient of ridge waveguide mode is greatly affected by the ridge width, and the polarization insensitivity of the waveguide is poor. In shallow etching, the mode birefringence coefficient (Δn = nTE-nTM) And the effect of ridge height is relatively weak, stable at 1.2 × 10-3. The related simulation and analysis provide theoretical support for the structural design of optoelectronic devices based on InP / InGaAsP ridge waveguide.
其他文献
应用多光子非线性Compton散射模型和数值计算方法,研究了Compton散射对超强激光与等离子体作用中能量输运的影响,提出了将Compton散射光和入射超强光作为电子能量输运的新机