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罗门哈斯公司电子材料公司继与IBM公司签署协议共同开发为32纳米以下制程的注入提供支持的电路图案成形(patterning)材料和工艺后,近日又宣布与IBM签暑另一项联合开发协议,此项合作将专注于开发用于32纳米和22纳米技术节点的铜线和低绝缘(Low-K)介质集成的CMP工艺技术。根据该协议,两家公司将制定出一个完整的CMP耗材方案来支持32纳米和22纳米制程半导体器件的大规模生产。
Rohm and Haas Electronic Materials Following an agreement with IBM to jointly develop circuit patterning materials and processes that support the injection of processes below 32nm, Rohm and Haas recently announced another joint development agreement with IBM, , This collaboration will focus on the development of CMP process technology for the integration of copper and low-k dielectric for 32- and 22-nanometer technology nodes. Under the agreement, both companies will develop a complete solution for CMP consumables to support the mass production of 32- and 22-nanometer process semiconductors.