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用原位电阻法监测了无限层薄膜（Sr0．7Ca0．3）0．9K0．1CuO2沉积时电阻随时间（即膜厚）的变化过程，以及薄膜热处理过程中电阻随温度的变化过程。通过监测了解到氧含量在无限层薄膜中起着重要作用。沉积完毕对真空室充入0．1MPaO2时薄膜吸氧。对薄膜热处理时，薄膜吸氧或放氧发生在330℃以上。低真空条件下的热处理过程是可逆的；而在高真空条件下，薄膜在高温时分解，显示出半导体行为。该方法直观有效，也可以成为制备其他非绝缘薄膜的监测手段。
In-situ resistance method was used to monitor the change of resistance with time (ie, film thickness) during the deposition of an infinite layer of thin film (Sr0.7Ca0.3) 0.9K0.1CuO2 and the change of resistance with temperature during the thin film heat treatment. Through monitoring, we know that the oxygen content plays an important role in the film. Deposited on the vacuum chamber filled with 0.1MPaO2 oxygen film. The thin film heat treatment, the film oxygen or oxygen release occurs above 330 ℃. The heat treatment process is reversible under low vacuum conditions, whereas under high vacuum conditions the film decomposes at high temperatures and shows semiconducting behavior. The method is intuitive and effective and can be used as a monitoring tool to prepare other non-insulating films.