【摘 要】
：
采用溶胶-凝胶法合成Al掺杂ZnO胶体,通过浸涂法在石英衬底上制备不同退火温度的ZAO薄膜。通过XRD、FT-IR、IR-2型红外辐射仪等手段对薄膜进行表征并研究不同工艺条件对薄膜红
【机 构】
：
北京交通大学,发光与信息技术教育部重点实验室,
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采用溶胶-凝胶法合成Al掺杂ZnO胶体,通过浸涂法在石英衬底上制备不同退火温度的ZAO薄膜。通过XRD、FT-IR、IR-2型红外辐射仪等手段对薄膜进行表征并研究不同工艺条件对薄膜红外性能的影响。结果显示,Al的掺杂并未改变ZnO的晶型结构,薄膜材料具有沿(002)晶面趋向性生长的特点。ZAO薄膜在可见光区具有高透过率,平均透过率在80%左右,在红外波段具有较高的透过率,所得到的ZAO薄膜在红外波段具有较低的发射率。
Al-doped ZnO colloids were synthesized by sol-gel method and ZAO thin films with different annealing temperature were prepared on quartz substrates by dip-coating method. The films were characterized by XRD, FT-IR and IR-2 infrared radiometers. The influence of different process conditions on the infrared properties of the films was also studied. The results show that the doping of Al does not change the crystal structure of ZnO, and the film material has the tendency to grow along the (002) crystal plane. ZAO film has high transmittance in the visible light region, with an average transmittance of about 80% and a high transmittance in the infrared band. The resulting ZAO film has a lower emissivity in the infrared band.
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