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详细论述了用于数字射频存储器系统的单片超高速GaAs 3bit相位DAC的设计、制造及测试.在南京电子器件研究所标准75mm GaAs工艺线采用0. 5μm全离子注入MESFET工艺完成流片.芯片输入输出阻抗实现在片50Ω匹配.测试结果表明,其工作带宽大于1. 5GHz,相位精度小于4%,电路的码流翻转速率大于12Gbps.
The design, fabrication and testing of single-chip ultra-high-speed GaAs 3bit phase DAC for digital RF memory system are discussed in detail.The chip is fabricated by using 0. 5μm all-ion implanted MESFET technology in the standard 75mm GaAs process line of Nanjing Institute of Electronic Devices The input and output impedances are matched on a 50Ω chip, the test results show that the operating bandwidth is greater than 1.5GHz, the phase accuracy is less than 4%, and the rate of bit-stream flipping is greater than 12Gbps.