论文部分内容阅读
In order to improve the quality of detector, In_x Ga_(1-x)As(x=0.82) buffer layer has been introduced in In_(0.82)Ga_(0.18)As/In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy(TEM) and high resolution transmission electron microscopy(HRTEM). The dislocations are effectively suppressed in In_x Ga_(1-x)As(x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation(MD). The threading dislocations(TDs) are directly related to the multiplication of the MDs in buffer layer.
In order to improve the quality of detector, In_x Ga_ (1-x) As (x = 0.82) buffer layer has been introduced in In_ (0.82) Ga_ (0.18) As / In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In_xGa_ (1-x) As dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.