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将Ｓｎ粉末和Ｃ６０粉末共同蒸发获得碱土族金属掺杂的Ｃ６０薄膜样品,与未掺杂的纯Ｃ６０样品一起进行扫描电镜、紫外可见吸收光谱和电阻随温度变化特性的测量,分析比较掺杂对薄膜样品的组成、结构和性质的影响．结果显示,掺锡后组成薄膜的纳米颗粒略有增大并突出表面,使薄膜的电子发射阈值降低;掺入的Ｓｎ原子在禁带中形成杂质能级,使电子吸收跃迁由原来的直接跃迁变为间接跃迁,导电性也由原来的绝缘体变为Ｎ型半导体．
Alkaline-earth metal-doped C60 thin film samples were co-evaporated with Sn powder and C60 powder. Scanning electron microscopy (SEM), UV-vis absorption spectra and resistance versus temperature characteristics were performed with undoped pure C60 samples. Effect of composition, structure and properties of thin film samples. The results show that the doped nano-particles slightly increase and protrude the surface of the thin film, so that the electron emission threshold of the thin film is reduced. The doped Sn atoms form impurity levels in the forbidden band and the electron absorption transition from the original direct transition Into an indirect transition, the conductivity from the original insulator into N-type semiconductor.