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利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高度以及界面的电子结构.结果表明,Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长.由光电子能谱实验确定的肖特基势垒高度为1·4eV.通过对界面价带谱和Au4f芯能级谱的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金.
The initial growth mode, the Schottky barrier height and the electronic structure at the interface of Au (0001) with low coverage were studied by using synchrotron radiation photoelectron spectroscopy. The results show that there are interfacial chemical reactions in the initial stage of Au deposition, Dimensional island growth.The Schottky barrier height determined by photoelectron spectroscopy was 1.4 eV.The existence of interfacial chemical reactions was confirmed by the analysis of the interface valence band spectra and the Au4f core energy spectrum.Using linear addition The valence band state density of GaN (0001) and Au was calculated by plane wave method and the mechanism of chemical reaction was analyzed. It is considered that the Au_Ga alloy was formed at the initial stage.