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Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.
Based on the idea of tilting a photoelectric conversion device, the monocrystalline silicon pn junction device was tilted to make light incident upon the device at an angle of 45 ° with the normal of the device surface, resulting in infrared multiple-internal-reflection inside the device. internal reflection leads to path length increase of infrared light, making the enhancement of infrared absorption of the device. Increase in 11% in energy conversion efficiency has been obtained through tilting the device.