【摘 要】
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利用激光剥离技术实现直径为50.8mm GaNLED外延膜的大面积完整剥离。激光剥离后的原子力显微镜(AFM)扫描和X射线双晶衍射谱(XRD)表明剥离前后外延膜的质量并未明显改变。并报
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利用激光剥离技术实现直径为50.8mm GaNLED外延膜的大面积完整剥离。激光剥离后的原子力显微镜(AFM)扫描和X射线双晶衍射谱(XRD)表明剥离前后外延膜的质量并未明显改变。并报道了在剥离掉后的蓝宝石(α-Al2O3)衬底上MOCVD外延生长InGaN/GaN多量子阱(MQW′s)LED器件结构,通过光致发光谱(PL)和XRD谱对比分析了在相同条件下剥离掉后衬底与常规衬底上生长的GaNLED外延膜晶体质量。
Large area full stripping of 50.8mm diameter GaNLED epitaxial film using laser lift-off technique. Atomic force microscopy (AFM) scanning and X-ray double crystal diffraction (XRD) after laser stripping showed that the mass of the epitaxial film before and after stripping did not change significantly. The structure of InGaN / GaN multiple quantum well (MQW’s) LED devices grown by MOCVD on the stripped sapphire (α-Al2O3) substrate has been reported. By comparing the photoluminescence (PL) and XRD spectra, Under the same conditions, the crystal quality of the GaNLED epitaxial film grown on the back substrate and the conventional substrate is peeled off.
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