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介绍了一种新制备低介电常数 SiO2薄膜的方法。以 TEOS 为前躯体、盐酸为催化剂、CTAB 作为模版剂,采用溶胶-凝胶法制备硅溶胶,以浸渍提拉法制备薄膜。采用 FITIR、XRD 和 AFM 等方法表征了薄膜,并用阻抗分析仪测量介电常数。结果表明,通过调节 CTAB 的浓度和老化时间可以制得介电常数小于 2.2 的 SiO2 薄膜,薄膜拥有较好的机械强度和耐刮擦性,通过采用六甲基二硅胶烷(HMDS)对薄膜表面进行修饰,可以提高薄膜的疏水性能从而提高其在空气中的稳定性。
A new method of preparing SiO2 film with low dielectric constant is introduced. Using TEOS as precursor, hydrochloric acid as catalyst and CTAB as template agent, sol-gel method was used to prepare silica sol and dip-coating method was used to prepare thin films. The films were characterized by means of FITIR, XRD and AFM, and the dielectric constant was measured by impedance analyzer. The results show that the SiO2 film with dielectric constant less than 2.2 can be prepared by adjusting the concentration and aging time of CTAB. The film has good mechanical strength and scratch resistance. By using hexamethyldisilazane (HMDS) Modification, can improve the hydrophobic properties of the film to improve its stability in the air.