【摘 要】
:
Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n+-type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CV
【机 构】
:
Institute of Microelectronics
论文部分内容阅读
Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n+-type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thickness of the Si layers grown under different PH3 flux and different growth temperature were investigated by spreading resistance probe. Results showed that the growth temperature had remarkable influence on the arsenic diffusion from the Si substrate. The thicknesses of the transition region were 0.16 μm grown at 700 ℃ and 0.06 μm grown at 500 ℃, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the epitaxial Si layer showed the quality of Si layer was very high.SiG e HBT device was fabricated by using a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA under a reverse voltage of - 14.0 V. The SiGe HBT device had also good output performance, and the current gain is 60.
其他文献
The green phosphor for white LED, Ca8Mg(SiO4)4Cl2∶Eu2+, Mn2+, was synthesized by high temperature solid state reaction under reducing atmosphere. During the pr
p-Amino benzene sulfonic acid (PABSA) is selected as the solute with amphoteric functional group,Lewis acid and Lewis base, to be separated from its dilute solu
The defect behaviors, such as fundamental point defect, defect pair formation and oxygen vacancy migration in ceria, were studied on the basis of energy minimiz
For electrothermal-film heating elements for ceramics, the quantitative expression of the relation between the contents of multicomponent semiconductor dope and
Hybrid precursors were assembled with cerium coordination polymers, polyethyl glycohol (PEG), SrCO3 and other functional components using a modified in-situ che
Methane conversion was studied with electric field enhanced plasma (EFEP) technique at the atmosphere pressure and low temperature ranging from 323 K to 373 K.
LaNiO3 was synthesized by sol-gel method in which lanthanum nitrate and nickel nitrate were used as start materials and citric acid was used as complex for gel
A series of catalysts were prepared by using complex sol-gel methods.Experimental results confirm the effect of different agents on structure and activity of Fe
SrAl2O4: Eu2+, Dy3+ nano-particle luminescence material was prepared by sol-gel method. Influences of synthesis conditions on the particle size and luminescence