在硅器件和集成电路生产中,广泛采用金属膜(如Al,Au等)做电接触的互连线,常规的刻蚀方法是采用化学溶液腐蚀,叫湿法.本文报道了一种新的金属膜干法刻蚀技术——气相刻蚀.图1是该技术的刻蚀反应室,整个系统由一个带有加热器的反应室和输入反应气体的装置组成.刻蚀前后的工序与常规光刻技术相似,但曝光显影后无需坚膜即可放入反应室中,在一定温度和气体流量下完成刻蚀.实验发现,通过选择输入适宜 In the production of silicon devices and integrated circuits, metal interconnects (such as Al, Au, etc.) are widely used as the electrical contacts, and the conventional etching method is chemical etching, which is called wet method. In this paper, Metal film dry etching technology - gas etching Figure 1 is the etching chamber of the technology, the entire system consists of a reaction chamber with a heater and a reaction gas input device before and after the etching process and conventional Photolithography technology is similar, but after exposure and development without hardening can be placed in the reaction chamber, at a certain temperature and gas flow to complete the etching experiment found that by selecting the appropriate input