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在穿透硅通孔(TSV)工艺中,研究了碱性抛光液组分的组合方式和抛光液的稀释倍数对硅衬底去除速率的影响。分析了硅衬底的去除机理;研究了抛光液对Si/Cu去除速率的选择性;研究了抛光液的存储时间不同时pH值和硅衬底去除速率的变化。该抛光液通过在硅溶胶中依次加入表面活性剂、无机碱、有机胺碱,再用去离子水稀释15倍配制而成,并应用于TSV图形片。实验结果表明:该抛光液对硅衬底的去除速率较高,达到1.045μm/min;采用该抛光液对TSV图形片抛光120s后,铜柱露出2μm;抛光液储存时间30天后,硅衬底去除速率仅损失1.3%。该碱性抛光液满足半导体制造行业要求。
In TSV process, the effects of the combination of alkaline polishing solution and the dilution ratio of polishing solution on the silicon substrate removal rate were studied. The removal mechanism of silicon substrate was analyzed. The selectivity of polishing solution to Si / Cu removal rate was studied. The changes of pH value and silicon substrate removal rate were studied when the storage time of polishing solution was different. The polishing solution is prepared by sequentially adding a surfactant, an inorganic alkali and an organic amine base into a silica sol and diluting with 15 times of deionized water, and is applied to a TSV graphic tablet. The experimental results show that the polishing liquid has a high removal rate of 1.045μm / min on the silicon substrate. After polishing the TSV graphics film for 120s, the copper column exposes 2μm. After the storage time of the polishing liquid is 30 days, the silicon substrate Removal rate lost only 1.3%. The alkaline slurry to meet the semiconductor manufacturing industry requirements.