【摘 要】
：
Heterostructures based on two-dimensional(2D)transition-metal dichalcogenides(TMDCs)possess unique electronic and optical properties,which open up unprecedented opportunities in nanoscale optoelectronic devices.Synthesizing high-quality 2D TMDC heterostru
【机 构】
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Department of Physics,Collaborative Innovation Center for Optoelectronic Semiconductors and Efficien
【出 处】
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中国科学：物理学 力学 天文学（英文版）
论文部分内容阅读
Heterostructures based on two-dimensional(2D)transition-metal dichalcogenides(TMDCs)possess unique electronic and optical properties,which open up unprecedented opportunities in nanoscale optoelectronic devices.Synthesizing high-quality 2D TMDC heterostructures with different core/shell size ratios is of great significance for practical applications.Here,we report a simple one-step chemical vapor deposition(CVD)method for fabricating MoS2/WS2 lateral heterostructures with controllable core/shell size ratio.An ultrathin MoO3/WO3 film prepared by thermal evaporation was used as the precursor,and a step-like heating process was adopted to separately grow MoS2 and WS2 monolayers by taking advantage of the different melting points of MoO3 and WO3 sources.High-quality MoS2/WS2 lateral heterostructures with sharp interfaces were fabricated by optimizing the key growth parameters.Furthermore,the core/shell size ratio of heterostructures could be easily controlled by changing the thickness ratio of MoO3/WO3 film,and an approximately linear dependence between them is revealed.Compared with MoS2 or WS2 monolayers,the MoS2/WS2 heterostructure exhibited a shortened exciton lifetime owing to the type-Ⅱ energy band alignment,which is conducive to the application of high-performance devices.This work provides a facile strategy for the synthesis of 2D lateral heterostructures with controllable size ratio.
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