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采用分子束外延技术生长InAs/AlAs/GaAs量子点,用透射电镜观察量子点的截面形貌,用光致发光光谱仪测试量子点的发光光谱.透射电子显微镜及光致发光光谱结果表明,量子点底部观察不到InAs浸润层,室温下样品的光致发光峰值波长达1.49μm,为研制光纤通讯中的半导体量子点激光器提供了实验依据.
The InAs / AlAs / GaAs quantum dots were grown by molecular beam epitaxy, the cross-sectional morphology of quantum dots was observed by transmission electron microscopy, and the emission spectra of quantum dots were measured by photoluminescence spectrometer.The results of transmission electron microscopy and photoluminescence spectroscopy showed that quantum dots InAs infiltrating layer can not be observed at the bottom. The peak wavelength of photoluminescence of the sample at room temperature is 1.49μm, which provides the experimental basis for the development of semiconductor quantum dot lasers in optical fiber communication.