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功率半导体器件发生机械应力失效的直接原因是外部应力大于器件自身强度,并间接引发器件上电应力或者热应力过载,最终造成器件损坏。文章结合机械可靠性理论中应力-强度干涉模型,以晶闸管为例对其机械应力失效的物理过程和失效机理进行解释,得出失效分析和可靠性设计的工程计算方法,并结合测试中发生的晶闸管失效案例对该分析计算方法的可行性和有效性进行了验证。
The direct cause of the mechanical stress failure of the power semiconductor device is that the external stress is greater than the strength of the device itself and indirectly causes the device to be electrically energized or thermally stressed, eventually causing the device to be damaged. Based on the stress-strength interference model of mechanical reliability theory, the article takes the thyristor as an example to explain the physical process and failure mechanism of mechanical stress failure, and obtains the engineering calculation method of failure analysis and reliability design. Combining with the test Thyristor failure cases verify the feasibility and effectiveness of this analytical method.