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基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2 THz的太赫兹变阻二极管.基于该二极管,通过建立其三维场结构,采用电磁场和电路仿真软件相结合的方法,一体化设计匹配电路和器件,研制出了D波段和G波段倍频源.D波段二倍频器在152.6 GHz测得最高倍频效率为2.7%,在147.4~155 GHz效率典型值为1.3%.G波段二倍频器在172 GHz测得最高倍频效率为2.1%,在150~200 GHz效率典型值为1.0%.
Based on the GaAs process line of the Nanjing Institute of Electronic Devices (NEDI), the diode performance is optimized by analyzing the doping concentration and thickness of the active layer (buffer layer, epitaxial layer) of the device, Schottky contact area, etc. And the cut-off frequency is 3.2 THz.According to the diode, through the establishment of its three-dimensional field structure, using a combination of electromagnetic field and circuit simulation software, integrated design of matching circuits and devices, developed a D-band and G-band Frequency multiplier, the maximum frequency doubling efficiency measured at 152.6 GHz for the D-band frequency doubler is 2.7%, and the efficiency is typically 1.3% at 147.4 to 155 GHz. The highest frequency-doubling efficiency measured by the G-band frequency doubler at 172 GHz 2.1%, and a typical efficiency of 1.0% at 150-200 GHz.