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设计并制作了一种新型的SOI 2×2马赫-曾德(MZ)热光开关。这种光开关采用了深刻蚀结构的配对多模干涉耦合器,同时,为了保证单模传输和调制,在连接波导和调制臂区域采用了浅刻蚀结构。深刻蚀结构增强了多模干涉耦合器对光场的限制,有利于自映像质量的提高,从而减少了自映像损耗和不均衡度,同时也提高了制作容差。基于强限制配对干涉耦合器的新型热光开关,其插入损耗为-11.0 dB,其中包括光纤-波导耦合损耗-4.3 dB,上升和下降开关时间分别为3.5μs和8.8μs。
A new SOI 2 × 2 Mach-Zehnder (MZ) thermo-optic switch was designed and fabricated. This optical switch uses a deep etched paired multimode interference coupler, and at the same time, a shallow etched structure is used in the waveguide and modulation arm areas to ensure single mode transmission and modulation. The deep etching structure enhances the limitation of the light field by the multimode interference coupler, which is beneficial to improve the self-image quality, thus reducing the self-image loss and unevenness, and also improving the fabrication tolerance. The new thermo-optic switch paired with an interference coupler based on a strong limit has an insertion loss of -11.0 dB, including a fiber-to-waveguide coupling loss of -4.3 dB and a rise and fall switching time of 3.5 μs and 8.8 μs, respectively.