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本文提出了一种具有渐变沟道“截面”(电导率)的新型场效应管.在通常的场效应管中,高频电流通过沟道时将因沟道电阻及其侧面电容的 R C效应而衰减,但是在一只 GaAs变截面场效应管中,当控制沟道场强使得其中的电子微分迁移率取负值时,高频电流振幅将沿着沟道递增,从而得出一种三端负阻放大器,其极限频率是很高的.
In this paper, we propose a new type of field-effect transistor (FET) with a gradual channel “cross section” (conductivity). In common FETs, the high frequency current flowing through the channel will be due to the RC effect of the channel resistance and its side capacitance Decay, but in a GaAs variable-cross-section FET, when controlling the channel field strength such that the electron differential transfer rate therein assumes a negative value, the high-frequency current amplitude will increase along the channel, resulting in a three-terminal Negative resistance amplifier, the limit frequency is high.