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报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .研究了两步阳极化法形成不同多孔度的双层多孔硅层及外延前对多孔硅进行长时间的低温真空预处理等工艺 .对获得的外延层作了 XRD、XTEM和扩展电阻等测量 ,测量结果表明硅外延层单晶性好 ,并和硅衬底、多孔硅层具有相同的晶向 .硅外延层为 P型 ,电阻率大于 1 0 0 Ω·cm.
Reported the epitaxial technology of single crystal silicon using ultra-high vacuum chemical vapor deposition (UHV / CVD) on the porous silicon layer.The formation of two-layer porous silicon layer with different porosity and two- Long time low temperature vacuum pretreatment process etc. The obtained epitaxial layer was measured by XRD, XTEM and extended resistance, the measurement results show that the silicon epitaxial layer has good single crystal and has the same with the silicon substrate, porous silicon layer The silicon epitaxial layer is P-type with a resistivity greater than 100 Ω · cm.