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采用粒径约为10nm的CdSSe/ZnS量子点层作为发光层,制备了叠层结构的量子点发光器件,研究了量子点层厚度对其薄膜形貌及量子点发光二极管性能的影响。原子力显微镜测试结果表明:量子点层过厚时,量子点颗粒发生团聚,且随着厚度的降低,团聚现象减弱;当量子点层厚度和量子点粒径相当时(约为10nm),量子点呈单层排列且团聚现象基本消失;而量子点层厚度低于10nm时,薄膜出现孔洞缺陷。器件的电流-电压-亮度等测试结果表明:量子点发光二极管中量子点层厚度与器件的光电特性密切相关,量子点层厚度为10nm的器件光电性能最优,具有最低的启亮电压4.2V,最高的亮度446cd/m~2及最高的电流效率0.2cd/A。这种通过控制旋涂转速改变量子点层厚度的方法操作简单、重复性好,对QD-LED的研究具有一定应用价值。
A CdSSe / ZnS QD layer with a particle size of about 10 nm was used as a light-emitting layer to fabricate a quantum dot light-emitting device with a laminated structure. The effects of the quantum dot thickness on the film morphology and quantum dot light-emitting diode performance were investigated. Atomic force microscopy results show that when the quantum dot layer is too thick, the quantum dots particles agglomerate, and with the decrease of the thickness, the agglomeration phenomenon is weakened. When the thickness of the quantum dot layer is equivalent to the quantum dot size (about 10 nm) The monolayer was arranged and the agglomeration phenomenon basically disappeared. When the quantum dot layer thickness was less than 10nm, the film had hole defects. The results of current-voltage-brightness test show that the thickness of QDs in QDs is closely related to the photoelectric properties of QDs. The devices with QDs of 10nm have the best optoelectronic performance with the lowest startup voltage of 4.2V , The highest brightness of 446cd / m ~ 2 and the highest current efficiency of 0.2cd / A. The method of controlling the thickness of the quantum dot layer by controlling the spin speed of the spin coating is simple in operation and good in repeatability, and has certain application value to the research of the QD-LED.