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用电子显微镜及 X 射线衍射研究了高场强超导体 V_3Ga 的高导电性能,结果是:此化合物只是由部分地有序排列与无序排列的细晶粒组成。材料的晶粒愈细,临界电流密度愈大。得出了晶界钉扎磁通线的结论。对此讨论了不同相互作用的机理。向钒中添加铪,锆可以进一步提高临界电流密度。锆、铪给 V_3Ga 相形成不均匀晶核的机会,并由此而进一步使晶粒尺寸变小。上述元素还生成第二相析出粒子,它同样钉扎磁通线。可惜的是到目前为止,避免细晶粒组织以后的再结晶还未成功;再结晶可大大减少钉扎磁通线点的数量。
The high conductivity of high field strength superconductor V_3Ga was investigated by means of electron microscopy and X-ray diffraction. As a result, the compound consisted of fine grains partially ordered and disordered. The finer grain of the material, the greater the critical current density. Obtained the grain boundary pinning magnetic flux line conclusion. The mechanism of different interactions is discussed. The addition of hafnium and zirconium to vanadium can further increase the critical current density. The zirconium and hafnium give the V_3Ga phase the opportunity to form non-uniform nuclei and thus further reduce the grain size. The above elements also generate second-phase precipitated particles, which also pin the magnetic flux lines. Unfortunately, so far, recrystallization to avoid fine grain structure has not been successful; recrystallization can greatly reduce the number of pinned flux lines.