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提出了一种发射极指分段和非均匀发射极指长、指间距组合的新型器件结构,以改善多指功率硅锗异质结双极晶体管(SiGe HBT)的热稳定性。考虑器件具有多层热阻,发展建立了相应的热传导模型。以十指功率SiGe HBT为例,运用有限元方法对其进行热模拟,得到三维温度分布。与传统发射极结构器件相比,新结构器件最高结温从416.3 K下降到405 K,各个发射指上的高低温差从7 K～8 K下降为1.5 K～3 K,热阻值下降14.67 K/W,器件整体温度分布更加均匀。
A novel device structure with emitter finger segment and non-uniform emitter finger length and finger pitch combination is proposed to improve the thermal stability of multi-finger power SiGe HBT. Considering the multi-layer device thermal resistance, the development of the establishment of the corresponding thermal conductivity model. Taking the ten-power SiGe HBT as an example, the three-dimensional temperature distribution is obtained by using the finite element method. Compared with the conventional emitter structure, the maximum junction temperature of the new device decreased from 416.3 K to 405 K, the temperature difference between each emitter finger decreased from 7 K to 8 K to 1.5 K to 3 K, and the thermal resistance decreased by 14.67 K / W, the overall temperature distribution of the device more evenly.