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在等离子增强气相化学沉积 (PECVD)系统中 ,利用氢稀释方法制备了氢化非晶碳 (a-C∶ H)薄膜样品。在高真空腔中测量了样品的场发射特性。与用纯甲烷 (CH4 )制备的 a-C∶H薄膜样品相比 ,经过氢稀释处理的样品场发射开启电场明显下降 ,达到 0 .5 V/μm。认为是样品的场增强因子的增大改善了样品的场发射特性 ,这种场增强可能来源于碳膜中电子结构的各相异性和碳膜表面氢终结的增加。
In plasma-enhanced chemical vapor deposition (PECVD) system, hydrogenated amorphous carbon (a-C: H) thin film samples were prepared by hydrogen dilution method. The field emission characteristics of the samples were measured in a high vacuum chamber. Compared with the a-C: H thin film samples prepared with pure methane (CH4), the emission electric field of the sample after hydrogen dilution significantly decreased to 0.5 V / μm. It is considered that the increase of the field enhancement factor of the sample improves the field emission characteristics of the sample, which may be derived from the anisotropy of the electronic structure in the carbon film and the increase of the hydrogen termination on the surface of the carbon film.