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SnO2薄膜具有透明导电的特性,因而被制成透明电极而广泛应用于平板显示器和太阳能电池中。研究表明,经掺杂的薄膜具有更优异的光电性能,然而传统的掺杂元素Sb,Te或F较为昂贵且有毒性,因此,掺氮将有望解决上述问题。本文利用反应射频磁控溅射法制备出不同氧含量的SnO2以及氮掺杂SnO2薄膜,并分析了薄膜的形貌结构及光电性能。结果表明:薄膜沉积过程中氧分压和氮掺杂对薄膜性能影响较大。在SnO2薄膜中,晶粒呈包状形态,随着氧分压的增加,晶粒取向从(101)转向(110)方向,晶粒尺寸逐渐变小,可见光透光率提升到80%以上,光学带隙增加到4.05 eV;在氮掺杂SnO2薄膜中,晶粒呈四棱锥形态,晶粒取向为(101)方向,随着氧分压的增加,可见光的透过率同样提升到80%以上,光学带隙增加到3.99 eV。SnO2薄膜和氮掺杂SnO2薄膜的电阻率最低分别达到1.5×10-1和4.8×10-3Ω.cm。
SnO2 thin films have the characteristics of transparent and conductive, and are thus made into transparent electrodes and are widely used in flat panel displays and solar cells. Studies have shown that the doped film has more excellent optoelectronic properties, but the traditional doping elements Sb, Te or F is more expensive and toxic, therefore, nitrogen is expected to solve the above problems. In this paper, SnO2 and nitrogen-doped SnO2 films with different oxygen contents were prepared by reactive RF magnetron sputtering. The morphology and optical properties of the films were analyzed. The results show that oxygen partial pressure and nitrogen doping have a great influence on the film properties during the film deposition. In the SnO2 thin film, the grains are in the form of inclusions. With the increase of oxygen partial pressure, the grain orientation changes from (101) to (110), the grain size becomes smaller and the visible light transmittance increases to more than 80% The optical bandgap increases to 4.05 eV. In nitrogen-doped SnO2 films, the grains are in the form of quadrangular pyramid and the orientation of the grains is (101). With the increase of oxygen partial pressure, the transmittance of visible light also increases to 80% Above, the optical bandgap increases to 3.99 eV. The lowest resistivity of SnO2 thin film and nitrogen doped SnO2 thin film reached 1.5 × 10-1 and 4.8 × 10-3Ω.cm, respectively.