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在直拉(CZ)法生长的重掺锑硅单晶中,由于锑在硅中的特性,造成无位错(文中指No<1000个/厘米~2)晶体生长的困难,同时断面电阻率均匀性也难以控制,严重影响了单晶的成品率。 本实验用改变动态工艺参数方法调整晶体固液界面,以控制一个微凸等温面,取得了无位错且电阻率分布较为均匀的晶体生长条件。使重掺锑硅单晶成品率达到40％。工艺基本稳定。
In the Cz-doped heavily doped antimony-silicon single crystals, the difficulty of crystal growth without dislocation (“No <1000” / cm "2) due to the properties of antimony in silicon, Uniformity is also difficult to control, seriously affecting the yield of single crystal. In this experiment, the crystal solid-liquid interface was adjusted by changing the dynamic process parameters to control a micro-convex isothermal surface, and the crystal growth conditions without dislocation and uniform resistivity distribution were obtained. So heavily doped antimony silicon single crystal yield of 40%. Process basically stable.