将描述电极性质的结区电场选作n~+-i-n~+或(n~+-n-n~+)结构a—Si:H器件电流流动微分方程组的另一对边界条件,应用Runge-Kutta法由初值问题技术解微分方程组得到该器件J-V特性数值解。在此基础上,空间电荷限制电流(SCLC)法推导出不同厚度薄a—Si:H样品隙态密度,证实了其费米能级附近隙态密度G(E_F)随厚度减少而增加是电极附近结区电场引起的。 The junction electric field describing the nature of the electrode was chosen as the other pair of boundary conditions for the current flow differential equations for a-Si: H devices with n ~ + -in ~ + or (n ~ + -nn ~ +) structures. Runge-Kutta The solution of differential equations from the initial value problem is solved by the numerical solution of JV characteristics of the device. On this basis, the space charge-limited current (SCLC) method deduces the gap density of thin a-Si: H samples with different thicknesses and confirms that the gap density G (E_F) near the Fermi level increases with decreasing thickness, Electric field near the junction area caused.