【摘 要】
：
Nitrogen doping has been proved to be an effective way to modify the properties of graphene and other carbon materials.Herein,we explore a composite with nitrogen doped carbon overlayers wrapping SiC substrate as a support for Ni (Ni/CN-SiC) and evaluate
【机 构】
：
State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences
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Nitrogen doping has been proved to be an effective way to modify the properties of graphene and other carbon materials.Herein,we explore a composite with nitrogen doped carbon overlayers wrapping SiC substrate as a support for Ni (Ni/CN-SiC) and evaluate its effects on the methanation activity.The results show that both the activity and stability of Ni are enhanced.Characterization with STEM,XRD,XPS,Raman and H2-TPR indicates that nitrogen doping generates more defects in the carbon overlayers,which benefit the dispersion of Ni.Furthermore,the reduction of Ni is facilitated.
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