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运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。发现直拉硅中杂质锗的存在可促进氧的外扩散,抑制氧沉淀的发生并可形成较宽的清洁区。
The effect of germanium on the formation of silicon cleaning zone was studied by using the intrinsic absorption process of high temperature-low temperature-high temperature three-step annealing. It was found that the presence of germanium in Czochralski silicon can promote the oxygen diffusion, inhibit the occurrence of oxygen precipitation and form a wider clean area.