【摘 要】
：
A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition (PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed.The quality of the prepared graphene films is evaluated by scanning el
【机 构】
：
School of Electronic Engineering,Xi’an University of Posts & Telecommunications,Xi ’an 710121,China
论文部分内容阅读
A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition (PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed.The quality of the prepared graphene films is evaluated by scanning electron microscopy,x-ray photoelectron spectroscopy,high-resolution transmission electron mi-croscopy,ultraviolet-visible spectroscopy,and electrochemical measurements.In a radio frequency (RF) power range of 50 W-300 W,the graphene growth rate increases with RF power increasing,while the intensity ratio of D-to G-Raman peak (ID/IG) decreases.When the RF power is higher than 300 W,the ID/IG rises again.By optimizing experimental parameters of hydrogen plasma etching and RF power,the properties of as-prepared flexible graphene on glass are mod-ulated to be able to achieve the graphene\'s transparency,good electrical conductivity,and better macroscopic uniformity.Direct growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.
其他文献
Cell migration in anisotropic microenvironment plays an important role in the development of normal tissues and organs as well as neoplasm progression,e.g.,osteogenic differentiation of embryonic stem cells was facilitated on stiffer substrates,indicating
Vanadium dioxide (VO2) is a strongly correlated material,and it has become known due to its sharp metal-insulator transition (MIT) near room temperature.Understanding the thermal properties and their change across MIT of VO2 thin film is important for the
The optical properties of materials are of great significance for their device applications.Different numbers of krypton ions are doped into high-quality Zn-polar ZnO films fabricated by molecular beam epitaxy (MBE) on sapphire substrates through ion impl
The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials.Recently,great enhancement has been observed in the absorption of the active region within a p-n junction.In
The absorption coefficient is usually considered as a constant for certain materials at the given wavelength.However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction.The absorption coefficient vari
We design a four-band terahertz metamaterial absorber that relied on the block Dirac semi-metal (BDS).It is composed of a Dirac material layer,a gold reflecting layer,and a photonic crystal slab (PCS) medium layer.This structure achieved perfect absorptio
A three-dimensional fluid model is developed to investigate the radio-frequency inductively coupled H2 plasma in a reactor with a rectangular expansion chamber and a cylindrical driver chamber,for neutral beam injection system in CFETR.In this model,the e
The mobility edges and reentrant localization transitions are studied in one-dimensional dimerized lattice with non-Hermitian either uniform or staggered quasiperiodic potentials.We find that the non-Hermitian uniform quasiperiodic disorder can induce an
The ultrathinβ-Sn(001) films have attracted tremendous attention owing to its topological superconductivity (TSC),which hosts Majorana bound state (MBSs) for quantum computation.Recently,β-Sn(001) thin films have been success-fully fabricated via phase tr
Porphine has a great potential application in molecular electronic devices.In this work,based on the density func-tional theory (DFT) and combining with nonequilibrium Green\'s function (NEGF),we study the transport properties of the molecular devices c