论文部分内容阅读
For the first time,we have introduced a novel GaN based resonant tunneling high electron mobility transistor(RTHEMT) on a silicon substrate.A monolithically integrated GaN based inverted high electron mobility transistor(HEMT) and a resonant tunneling diode(RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study.The 10%Al composition in the barrier layer of the GaNbased RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance.Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure.The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.
For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.