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分析薄膜的表面形貌对其生长机理和光学性质研究有着十分重要的作用。本文使用CF4和CH4为源气体,利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C∶F∶H)薄膜,并在N2气氛中进行了不同温度的退火处理。用原子力显微镜(AFM)和扫描电子显微镜(SEM)观察了薄膜表面形貌,发现低功率下沉积的薄膜表面均匀性好、缺陷少;在低温下沉积的薄膜表面光滑,而高温下粗糙;真空低温退火可使薄膜表面形貌得到改善,但薄膜内空洞增加,退火温度过高,薄膜的结构发生变化,且在薄膜表面发生皲裂现象。用R am an光谱对薄膜内的结构变化进行了进一步的分析。
Analysis of the surface morphology of the film on its growth mechanism and optical properties has a very important role. In this paper, fluorinated hydrogenated amorphous carbon (aC: F: H) films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using CF4 and CH4 as source gases. N2 atmosphere annealing at different temperatures. The surface morphology of the films was observed by atomic force microscopy (AFM) and scanning electron microscope (SEM). The films deposited at low power showed good uniformity and few defects. The films deposited at low temperature were smooth and rough at high temperature. Low temperature annealing can improve the surface morphology of the film, but the film cavity increases, the annealing temperature is too high, the film structure changes, and in the film surface chapped phenomenon. The structural changes in the film were further analyzed by Ram an spectroscopy.