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采用直流磁控溅射法在掺氟的SnO_2(FTO)导电玻璃衬底上沉积纯钒金属薄膜,再在常压氮氧混合气氛中退火制备VO_2/FTO复合热致变色薄膜,并对复合薄膜的结构、光学特性以及电学特性进行了测试分析。结果表明,薄膜结晶程度较高,表面平滑致密,具有很好的一致性,导电玻璃上的FTO并没有改变VO_2择优取向生长,但明显改变了VO_2薄膜的表面形貌特征。与VO_2薄膜的典型相变温度68℃相比,VO_2/FTO复合薄膜的相变温度降低约20℃,热滞回线收窄到5℃,相变前后的红外透过率分别为45%和22%,相变前后电阻率的变化达3个数量级,VO_2/FTO复合薄膜优良的光电特性对新型光电薄膜器件的设计开发和应用具有重要意义。
Pure vanadium metal films were deposited on fluorine-doped SnO_2 (FTO) conductive glass substrate by direct current magnetron sputtering and then annealed in a mixed atmosphere of nitrogen and oxygen to prepare VO_2 / FTO composite thermochromic films. The structure, optical characteristics and electrical characteristics of a test analysis. The results show that the crystallinity of the film is high, the surface is smooth and dense, and the consistency is good. The FTO on the conductive glass does not change the preferred orientation of VO_2 growth, but obviously changes the surface morphology of the VO_2 film. Compared with the typical phase transition temperature of VO_2 thin film, the phase transition temperature of VO_2 / FTO thin film decreases by about 20 ℃ and the thermal hysteresis loop narrows to 5 ℃. The infrared transmittance before and after phase transformation is 45% and 22%. The change of resistivity before and after phase transformation reaches three orders of magnitude. The excellent photoelectric properties of VO_2 / FTO composite thin films are of great significance for the design, development and application of novel photoelectric thin film devices.