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概述了绝缘层上硅横向绝缘栅双极晶体管(SOI LIGBT)抗闩锁结构的改进历程,介绍了从早期改进的p阱深p+欧姆接触SOI LIGBT结构到后来的中间阴极SOI LIGBT、埋栅SOILIGBT、双沟道SOI LIGBT、槽栅阳极短路射频SOI LIGBT等改进结构;阐述了一些结构在抗闩锁方面的改善情况,总结指出抑制闩锁效应发生的根本出发点是通过降低p基区电阻的阻值或减小流过p基区电阻的电流来削弱或者切断寄生双极晶体管之间的正反馈耦合。
The improvement of anti-latch-up structure of SOI LIGBT on insulating layer is introduced. The improvement from early improved p-well deep p + ohmic contact SOI LIGBT structure to later intermediate cathode SOI LIGBT, buried gate SOILIGBT , Double-channel SOI LIGBT, slot gate anode short-circuit radio frequency SOI LIGBT and other improved structure; described some of the structure in the improvement of anti-latch-up, concluded that the inhibitory effect of the latch-up is the fundamental starting point by reducing the resistance of p base resistance Value or reduce the current through the p base resistance to weaken or cut off the positive feedback coupling between parasitic bipolar transistors.