论文部分内容阅读
众所周知,InGaAs在InP和GaAs二个系列材料中具有最大的载流子迁移率和最大的饱和速率,InGaAs/GaAs应变量子阱可以把GaAs的发射波长从0.83μm延伸到1.1μm,而InGaAs/InP量子阱激光器又可以实现1.1～1.8μm内任意波长发射,并且,InGaAs/InP探测器的响应波长范围为0.93μm～1.65μm,因此,它不论对高速电子器件如HBT和HEMT,还是光电子器件如激光器(LD)和探测器(PIN和APD)都具有极重要的意义。虽然利用液相外延巳生长出高质量的InGaAs/InP材料,但是,
It is well known that InGaAs has the highest carrier mobility and the largest saturation rate in two series of InP and GaAs materials. The InGaAs / GaAs strained quantum well can extend the emission wavelength of GaAs from 0.83μm to 1.1μm, while InGaAs / InP The quantum well laser can emit at any wavelength within 1.1 ~ 1.8μm, and the response wavelength range of InGaAs / InP detector is 0.93μm ~ 1.65μm. Therefore, it is not only suitable for high speed electronic devices such as HBT and HEMT, but also optoelectronic devices such as Laser (LD) and detector (PIN and APD) are of great importance. Although high quality InGaAs / InP materials have been grown by liquid phase epitaxy,