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采用直流反应磁控溅射的技术,在钨铜基片上沉积了AlN薄膜,通过X射线衍射、扫描电镜及能量色散能谱仪和电流电压测试仪对不同条件下制备的AlN薄膜的结构、形貌和电阻率进行了表征。结果表明,在一定范围内增加功率可以显著改善氮化铝结晶特性,在300 W时,氮化铝薄膜表现为比较明显的(100)择优取向,沉积速度达5μm/h;退火处理可以改善薄膜的结晶性,同时提高薄膜的电阻率;SEM分析表明,在300 W时,钨铜衬底上氮化铝比较均匀,较大钨颗粒已被覆盖,但致密性需要进一步提高。
AlN thin films were deposited on tungsten-copper substrates by DC reactive magnetron sputtering. The structure, shape and structure of AlN films prepared under different conditions were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and current-voltage tester Surface and resistivity were characterized. The results show that the addition of power within a certain range can significantly improve the crystallization characteristics of aluminum nitride. At 300 W, the AlN films show a (100) preferred orientation with a deposition rate of 5 μm / h. The annealing treatment can improve the properties of the films The crystallinity and the resistivity of the films were improved at the same time. The SEM analysis showed that the aluminum nitride was more uniform on the tungsten-copper substrate at 300 W, and the larger tungsten particles were covered, but the compactness needed to be further improved.