Novel bandgap-based under-voltage-lockout methods with high reliability

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:y123321y886
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Highly reliable bandgap-based under-voltage-lockout(UVLO) methods are presented in this paper.The proposed under-voltage state to signal conversion methods take full advantages of the high temperature stability characteristics and the enhancement low-voltage protection methods which protect the core circuit from error operation; moreover,a common-source stage amplifier method is introduced to expand the output voltage range.All of these methods are verified in a UVLO circuit fabricated with a 0.5 μm standard BCD process technology.The experimental result shows that the proposed bandgap method exhibits a good temperature coefficient of 20 ppm/℃,which ensures that the UVLO keeps a stable output until the under-voltage state changes.Moreover,at room temperature,the high threshold voltage VTH+ generated by the UVLO is 12.3 V with maximum drift voltage of 80 mV,and the low threshold voltage VTH- is 9.5 V with maximum drift voltage of ±70 mV.Also,the low voltage protection method used in the circuit brings a high reliability when the supply voltage is very low. Highly reliable bandgap-based under-voltage-lockout (UVLO) methods are presented in this paper. Proposed under-voltage state to signal conversion methods take full advantages of the high temperature stability characteristics and the enhancement low-voltage protection methods which protect the a common-source stage amplifier method is introduced to expand the output voltage range. All of these methods are verified in a UVLO circuit fabricated with a 0.5 μm standard BCD process technology. The experimental result shows that the The proposed bandgap method exhibits a good temperature coefficient of 20 ppm / ° C, which ensures that the UVLO keeps a stable output until the under-voltage state changes. Moreover, at room temperature, the high threshold voltage VTH + generated by the UVLO is 12.3 V with maximum drift voltage of 80 mV, and the low threshold voltage VTH- is 9.5 V with maximum drift voltage of ± 70 mV. Also, the low voltage protection method used in the circuit brings a high reliability when the supply voltage is very low.
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