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采用中频反应磁控溅射方法,在钼/聚酰亚胺/硅(Mo/PI/Si)基片上室温下制备出c轴取向柱状结晶氮化铝(AlN)薄膜,X射线衍射摇摆曲线和拉曼谱E2(高)峰半高宽分别是2.2°和18.6 cm-1。制作了基于Mo/AlN/Mo/PI/Si结构的薄膜体声波谐振器(FBARs),PI/Mo异质结用作声绝缘层。用矢量网络分析仪分析了FBARs的谐振特性,器件等效耦合系数达到5.4%。
The c-axis aligned columnar AlN films were prepared on the molybdenum / polyimide / silicon (Mo / PI / Si) substrates by MF reactive magnetron sputtering. The X-ray diffraction rocking curve and The full width at half maximum of the E2 (high) peak of the Raman spectrum is 2.2 ° and 18.6 cm-1, respectively. Thin film bulk acoustic resonators (FBARs) based on Mo / AlN / Mo / PI / Si structures were fabricated and PI / Mo heterojunction was used as the acoustic insulator. The resonant characteristics of FBARs were analyzed with a vector network analyzer. The equivalent coupling coefficient of the device reached 5.4%.